Optical pumping in strained In0.2Ga0.8As/GaAs quantum wells
نویسندگان
چکیده
منابع مشابه
Modeling and Simulation of Strained Quantum Wells in Semiconductor Lasers
Amodel allowing for efficiently obtaining band structure information on semiconductor Quantum Well structures will be demonstrated which is based on matrix-valued kp-Schrödinger operators. Effects such as confinement, band mixing, spin-orbit interaction and strain can be treated consistently. The impact of prominent Coulomb effects can be calculated by including the Hartree interaction via the ...
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The saturation of excitonic absorption in strained InGaAs/AlGaAs quantum wells is systematically measured as a function of strain. By comparison with an unstrained GaAs/AlGaAs quantum well sample a reduction by a factor of up to 9 in the saturation carrier density is observed in strained samples with indium concentrations of 10% ‘and 15%. Very low saturation densities, as low as 0.82X 1017 cmm3...
متن کاملInvestigation of the optical gain of In0.2Ga0.8As/GaAs compressively strained quantum wells
The valence hole subbands, the TE and TM mode optical gains and radiative current density of In0.2Ga0.8As/GaAs compressively strained quantum well lasing at 980nm have been studied by using a 6x 6 Hamiltonian model including the heavy hole, light hole and spin-orbit splitting bands. The compressively strain enhances the TE mode optical gains and strongly depresses the TM mode optical gain. A ve...
متن کاملOptical phonons of strained GaAs/GaP quantum wells studied by Raman spectroscopy
We have studied the optical phonons of GaAs quantum wells strained to GaP. The phonon frequencies have been measured by Raman spectroscopy. The results have been compared with calculations based on the linear chain model and the random isoamplitude model. The comparison suggests a certain degree of atomic intermixing at the interfaces, mainly due to a limited but measurable arsenic carry-over d...
متن کاملOptical Physics of Quantum Wells
Quantum wells are thin layered semiconductor structures in which we can observe and control many quantum mechanical effects. They derive most of their special properties from the quantum confinement of charge carriers (electrons and "holes") in thin layers (e.g 40 atomic layers thick) of one semiconductor "well" material sandwiched between other semiconductor "barrier" layers. They can be made ...
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ژورنال
عنوان ژورنال: Le Journal de Physique IV
سال: 1993
ISSN: 1155-4339
DOI: 10.1051/jp4:1993565